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| 2830 S. Fairview Street Santa Ana, CA 92704 Phone: (714) 979-8220 Fax: (714) 559-5989 MSAGA11F120D Fast IGBT Die for Implantable Cardio Defibrillator Applications DESCRIPTION: * * * N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Silicon Nitride, .8um Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical. * Collector/Gate Metallization: Ti - Ni (1 um) - Ag (0.2 um) for soft solder attach Surge Current (ICM) - Amps 55 10s x 4ms double exponential FEATURES: * * * * * Low Forward Voltage Drop, Low Tail Current Avalanche and Surge Rated High Freq. Switching to 20KHz Ultra Low Leakage Current RBSOA and SCSOA Rated * Available with Lot Acceptance Testing Spec MSAGA11F120DL, "-L" Suffix 35-50% of ICM Max 10s 4000s MAXIMUM RATINGS: SYMBOL VCES VCGR VEG VGE IC1 IC2 ICM ICM1 ICM2 ICsurge2 EAS PD TJ, TSTG Time - sec PARAMETER Collector-Emitter Voltage Collector-Gate Voltage (RGE = 20K ) Emitter-Collector Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25 C Continuous Collector Current @ TC = 110 C Surge Current (10s x 4ms double exponential, see figure 2) Pulsed Collector Current @ TC = 25 C Pulsed Collector Current @ TC = 110 C Surge Current: tp= 2 us (ton= 1.5 s; toff= 0.5 s to 50% decay), 10 pulses, duty cycle= 1:2,500,000 (12 pulses/minute) Single Pulse Avalanche Energy Total Power Dissipation Operating and Storage: Junction Temperature Range VALUE 1200 1200 15 20 22 11 55 44 22 400 10 125 -55 to 150 UNIT Volts Volts Volts Volts Amps Amps Amps Amps Amps Apk mJ Watts C STATIC ELECTRICAL CHARACTERISTICS: SYMBOL BVCES RBVCES VGE(TH) VCE (ON) CHARACTERISTIC / TEST CONDITIONS Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.5mA) Collector-Emitter Reverse Breakdown Voltage(R) (VGE = 20V, IC = 10mA) Gate Threshold Voltage (VCE = VGE, IC = 350A, TJ = 37 C Gate Threshold Voltage (VCE = VGE, IC = 350A, TJ = 25 C Collector-Emitter On Voltage (VGE = 15V, IC = IC2, TJ = 25 C) Collector-Emitter On Voltage (VGE = 15V, IC = IC2, TJ = 37 C) Collector-Emitter On Voltage (VGE = 15V, IC = IC2, TJ = 125 C) ICES Collector Cut-off Current (VCE = 80%VCES, VGE = 0V, TJ = 25 C) Collector Cut-off Current (VCE = 80%VCES, VGE = 0V, TJ = 37 C) Collector Cut-off Current (VCE = 80%VCES, VGE = 0V, TJ = 125 C) Gate-Emitter Leakage Current (VGE = 25V, VCE =0V) IGES Gate-Emitter Leakage Current (VGE = 25V, VCE =0V), Tj= 37 C 2 4 4.5 MIN 1200 -15 5.7 5.5 3.1 3.5 4 0.02 0.07 1000 100 4.5 10 6.5 3.5 TYP MAX UNIT Volts Volts Volts Volts Volts Volts Volts uA uA uA nA nA MSC0947.PDF 2/5/99 All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25 unless otherwise specified C MSAGA11F120D DYNAMIC CHARACTERISTICS: SYMBOL Cies Coes Cros Qg Qge Qgc Fast IGBT Die for Implantable Cardio Defibrillator Applications CHARACTERISTIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-off Delay Time Fall Time Turn-off Delay Time Rise Time Turn-off Delay Time (tsv) (tsi) Fall Time (tfv) (tfi) Turn-off Switching Energy Forward Transconductance TEST CONDITIONS VGE = 0V VCE = 25V f = 1 MHz VGE = 15V VCC = 0.5VCES IC = IC2 Resistive Switching (25 C) VGE = 15V, VCC = 0.5VCES IC = IC2 Re = 150 Inductive Switching (25 C) VCLAMP(PEAK) = 0.5VCES VGE = 15V, IC = IC2 RG = 150 , TJ = +25 C Inductive Switching (125 C) VCLAMP(PEAK) = 0.5VCES VGE = 15V, IC = IC2 MIN TYP 600 60 38 60 4 36 35 120 580 260 55 50 380 80 40 100 550 700 MAX 720 120 55 UNIT pF pF pF nC nC nC ns ns ns ns td (on) tr td (off) tf td (on) tr td (off) tf td (on) tr td (off) 110 100 570 120 ns ns ns ns ns ns ns tf RG = 150 , TJ = +125 C 160 40 ns Eoff gfe 1 VCE =20V, IC = IC2 4.5 5 mJ S Repetitive Rating: Pulse width limited by maximum junction temperature. - IC = IC2, VCC = 50V, RCE = 25 , L = 300H, TJ = 25 C (R) TJ = 150 C See MIL-STD-750 Method 3471 DIE PROBE PARAMETERS (100% TESTS): SYMBOL BVCES RBVCES VGE(TH) VCE (ON) ICES IGES CHARACTERISTIC / TEST CONDITIONS Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 0.5mA) Collector-Emitter Reverse Breakdown Voltage (R) (VGE = 15V, IC = 10mA) Gate Threshold Voltage (VCE = 6.5 V, IC = 350A, TJ = 25 C Collector-Emitter On Voltage (VGE = 12V, IC = 1 A, TJ = 25 C) Collector Cut-off Current (VCE = 1200 V, VGE = 0V, TJ = 25 C) Gate-Emitter Leakage Current (VGE = 20 V, VCE =0V) MIN 1200 -15 4.6 TYP 1400 30 5.5 1.45 0.15 5 MAX UNIT Volts 6.5 2.0 400 120 uA nA MSC0947.PDF 2/5/99 All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25 unless otherwise specified C MECHANICAL CHARACTERISTICS TYPICAL SURGE PERFORMANCE Surge Current (ICM) - Amps 55 10s x 4ms double exponential 35-50% of ICM Max 10s 4000s Time - sec MSC0947.PDF 2/5/99 All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, TC = 25 unless otherwise specified C |
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